MOSFET, P-CH, -20V, -4A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.