가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF540ZSTRLPBF | 0 | 3200 | Bulk | 7h | |||||||
| Farnell | IRF540ZSTRLPBF | 0 | 1 | Cut Tape | 5h | |||||||
| Win Source | WS-IRF540ZSTRLPBF | 15 | 5 | 19h | ||||||||
| Worldway Electronics | IRF540ZSTRLPBF | 15,267 | 7 | Tape & Reel | 23h | |||||||
| IC Components Ltd. | IRF540ZSTRLPBF | 3,810 | 3d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-05-10
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
관련 부품
STMicroelectronicsSTB35NF10T4
N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
InfineonIRF1310NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V
InfineonIRF1310NSTRLPBF
Single N-Channel 100 V 160 W 110 nC Hexfet Power Mosfet Surface Mount - D2PAK
STMicroelectronicsSTB40NF10LT4
N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STripFET MOSFET
설명
유통업체에서 제공한 Infineon IRF540ZSTRLPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;D2Pak;PD 92W;VGS +/-20V
IRF540xx Series 100 V 26.5 mOhm 36 A HEXFET® Power MOSFET - D²PAK (TO-263AB)
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 100V 36A 3-Pin(2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
HEXFET POWER MOSFET Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:36A; On Resistance, Rds(on):26.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)36 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance26.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.77 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation92 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance26.5 mΩ
Package Quantity800
Power Dissipation92 W
Rds On Max26.5 mΩ
Rise Time51 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time15 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm