공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-08-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
STMicroelectronicsSTB40NF10T4
Mosfet Transistor, N Channel, 40 A, 100 V, 28 Mohm, 10 V, 1.7 V |Stmicroelectronics STB40NF10T4
InfineonIRF540NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
InfineonIRF540NSTRLPBF
Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel
InfineonIRF540NSTRRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
STMicroelectronicsSTB35NF10T4
N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
STMicroelectronicsSTB30NF10T4
N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STripFET II MOSFET
설명
유통업체에서 제공한 Infineon IRF1310NSPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V
Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 100V, 42A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:42A; Resistance, Rds On:0.036ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Power Dissipation:160W; Power Dissipation on 1 Sq. PCB:3.8W; Power, Pd:160W; SMD Marking:IRF1310NS; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.95°C/W; Voltage, Vds:100V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V
제조업체 별칭
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- Infineon Technologies
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance36 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation120 W
Rds On Max36 mΩ
Recovery Time270 ns
Resistance36 mΩ
Rise Time56 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm