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대체 부품
Price @ 1000
$ 30.013
$ 32.96
Stock
51,712
6,936
Authorized Distributors
2
2
Mount
Through Hole
Through Hole
Case/Package
TO-3
TO-3
Drain to Source Voltage (Vds)
500 V
500 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
4 V
-
Rds On Max
500 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
150 W
150 W
Input Capacitance
2.7 nF
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 9 months ago)
설명
유통업체에서 제공한 Infineon IRF450에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.4Ohm;ID 12A;TO-3;PD 150W;VGS +/-20V;Qg 55
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single N-Channel 500 V 150 W 120 nC Hexfet Transistor Through Hole - TO-3
MOSFET N-CH 500V 12A TO204AA N-Channel 500 V 12A (Tc) 150W (Tc) Through Hole TO-204AA (TO-3)
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
MOSFET TRANSISTOR; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-204AA; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:150W; Voltage Vgs Max:4V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Weight10 g
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vds)500 V
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance400 mΩ
PackagingBulk
Power Dissipation150 W
Rds On Max500 mΩ
Rise Time190 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time170 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)500 V
Dimensions
Height7.74 mm