가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF3205ZLPBF | 100 | 13h | |||||||||
| RS (Formerly Allied Electronics) | IRF3205ZLPBF | 0 | 3200 | Bulk | 6h | |||||||
| Farnell | IRF3205ZLPBF | 0 | 1 | 12h | ||||||||
| Microchip USA | IRF3205ZLPBF | 2,966 | 3K | Tube | 1d | |||||||
| Win Source | WS-IRF3205ZLPBF | 15,100 | 35 | 14h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
관련 부품
InfineonIRF4905LPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 20Milliohms;ID -70A;TO-262;PD 170W;gFS 19S
InfineonAUIRF1010ZL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
설명
유통업체에서 제공한 Infineon IRF3205ZLPBF에 대한 설명입니다.
Single N-Channel 55 V 6.5 mOhm 110 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time67 ns
Forward Voltage1.3 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.45 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation170 W
Rds On Max6.5 mΩ
Rise Time95 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)55 V
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책