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이 부품
대체 부품
Price @ 1000
$ 0.98
$ 4.9
Stock
2,320,925
228,670
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
75 A
160 A
Threshold Voltage
4 V
2 V
Rds On Max
4 mΩ
4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
333 W
Input Capacitance
5.669 nF
5.669 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-06-21
Lifecycle StatusNRND (Last Updated: 3 months ago)
관련 부품
InfineonIRF2204PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 3 Milliohms;ID 210A;TO-220AB;PD 330W;VF 1.3V
InfineonIRL1404PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4 Milliohms;ID 160A;TO-220AB;PD 200W;gFS 93S
InfineonIRL3713PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
NXP SemiconductorsBUK7504-40A,127
Trans MOSFET N-CH 40V 198A Automotive 3-Pin(3+Tab) TO-220AB Rail
설명
유통업체에서 제공한 Infineon IRF1404PBF에 대한 설명입니다.
Single N-Channel 40 V 0.004 Ohm 196 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 333 W
Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 40V, 162A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:202A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:4mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:650A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating162 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.669 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max4 mΩ
Recovery Time117 ns
Resistance4 mΩ
Rise Time190 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time46 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)40 V
Dimensions
Height19.8 mm
Lead Pitch2.54 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책