Infineon IRF100B201

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3

Power MOSFET, N Channel, 100 V, 192 A, 0.0042 ohm, TO-220AB, Through Hole

Trans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube

Power Field-Effect Transistor, 192A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH, 100V, 192A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 192 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.5 / Gate-Source Voltage V = 20 / Fall Time ns = 100 / Rise Time ns = 97 / Turn-OFF Delay Time ns = 110 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 441