Infineon IRFI4110GPBF

N CH POWER MOSFET, HEXFET, 100V, 72A, TO-220AB; Transistor Polarity:N Channel; C

Single N-Channel 100 V 4.5 mOhm 190 nC HEXFET® Power Mosfet - TO-220-3

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak, FULLPAK220-3, RoHS

Trans MOSFET N-CH 100V 72A 3-Pin(3+Tab) TO-220AB Full-Pak

Power Field-Effect Transistor, 72A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N CH POWER MOSFET, HEXFET, 100V, 72A, TO; N CH POWER MOSFET, HEXFET, 100V, 72A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 72 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.7 / Gate-Source Voltage V = 20 / Fall Time ns = 71 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 81 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 61