HALF BRIDGE DRIVER, SINGLE, 24SSOP; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:2A; Output Resistance:60ohm; Input Delay:440ns; Output Delay:440ns; Supply Voltage Range:11.5V to 20V; Driver Case Style:SSOP; No. of Pins:24; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (20-Jun-2011); Base Number:2214; No. of Outputs:4; Offset Voltage:1200V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:1A; Output Current + Max:1500mA; Output Current - Max:1000mA; Output Voltage:1220V; Output Voltage Max:20V; Output Voltage Min:10.4V; Package / Case:SSOP; Power Dissipation Pd:1.5W; Supply Voltage Max:20V; Supply Voltage Min:11.5V; Termination Type:SMD
EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2 A source and 3 A sink currents in SSOP-24 lead package for IGBT discretes and IGBT modules.IR2214SS utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such as desaturation detection (DESAT), soft over-current shutdown (Soft-off), under-voltage lockout (UVLO) protection, two-level turn-on (TLTO) output, deadtime, and fault reporting.The IR2214SS half-bridge gate driver is well suited for low- and medium- power designs up to 10 kW. IR2214SS provides high performance drive capability with full protective features for a cost-competitive solution. Optimized system performance with the IR2214SS and EconoPIM™3 module is demonstrated with our evaluation board EVAL-M1-IR2214IR2214SS belongs to the 1200 V level-shift junction isolated (JI) gate driver family and is also available as a 600 V variant: IR2114SS.