가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 43AC3312 | 1 | 1 | 1d | ||||||||
| Newark | IR2181STRPBF | 1 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IR2181STRPBF | 14,113 | 1 | |||||||||
| DigiKey | IR2181SPBFCT-ND | 12,090 | 1 | Cut Tape | ||||||||
| Future Electronics | IR2181STRPBF | 0 | 2500 | Tape & Reel |
대체 부품
Price @ 1000
$ 1.27
$ 2.049
Stock
671,673
774,385
Authorized Distributors
6
6
Case/Package
SOP
SOP
Number of Pins
8
8
Channel Type
Independent
Independent
Number of Drivers
2
2
Max Output Current
2.3 A
2.3 A
Rise Time
60 ns
60 ns
Fall Time
35 ns
35 ns
Min Supply Voltage
10 V
10 V
Max Supply Voltage
20 V
20 V
Max Power Dissipation
625 mW
625 mW
관련 부품
InfineonAUIRS2181STR
Tape & Reel (TR) AU842992 Half-Bridge 2000 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW
onsemiNCP5109ADR2G
85ns 2 10V 170ns 20V 800mV,2.3V Non-Inverting IGBT,MOSFET,N 35ns 250mA,500mA SOIC-8 , 1.5mm
InfineonIRS2608DSPBF
Tube IRS2608DSPBF Half-Bridge 1996 gate driver 220ns 125C 200mA 350mA 625mW
InfineonIRS2607DSTRPBF
High Voltage, High Speed Power Mosfet And Igbt Driver With Independent High Side, SOIC 8N, RoHS
MicrochipMIC4123YME
DRIVER, MOSFET, DUAL, 3A, 8SOIC; Device Type:Low Side; Module Configuration:Inve
설명
유통업체에서 제공한 Infineon IR2181STRPBF에 대한 설명입니다.
MOSFET Driver, High Side and Low Side, 10 V to 20 V Supply, 2.3 A Out, 220 ns Delay, SOIC-8
600 V high-side and low-side gate driver IC, SOIC 8N, RoHS
Infineon SCT
IR2181 Series 600 V 1.9 A 20 V Supply Dual High And Low Side Driver - SOIC-8
Tape & Reel (TR) IR2181SPBF Half-Bridge 1996 gate driver 40ns 20ns -40C~150C TJ 1.9A 2.3A 0.8V 2.7V
Driver 600V 2.3A 2-OUT High and Low Side Non-Inv 8-Pin SOIC N T/R / IC DRIVER HIGH/LOW SIDE 8SOIC
Half Bridge 2.3A 10V~20V 1.9A SOIC-8 Gate Drive ICs ROHS
Gate Drivers; IR2181STRPBF; INFINEON TECHNOLOGIES; 2; 625 mW; 2; 2.3 A
EiceDRIVER™ 600 V high and low-side Gate Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP .For the new version with our SOI technology we recommend 2ED2181S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Channel TypeIndependent
Fall Time35 ns
Max Operating Temperature125 °C
Max Output Current2.3 A
Max Power Dissipation625 mW
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage10 V
Number of Channels2
Number of Circuits1
Number of Drivers2
Number of Outputs2
Operating Supply Voltage15 V
Output Current1.9 A
Package Quantity2500
PackagingTape & Reel
Power Dissipation625 mW
Propagation Delay330 ns
Rise Time60 ns
Schedule B8542310000
Temperature GradeAutomotive
Turn-Off Delay Time330 ns
Turn-On Delay Time270 ns
Dimensions
Height1.4986 mm
Height - Seated (Max)1.75 mm
Length4.9 mm
Terminal Pitch1.27 mm
Width3.9 mm