DRIVER, MOSFET/IGBT, HALF BRIDGE, 2103; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:360mA; Input Delay:680ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2103; IC Generic Number:2103; Logic Function Number:2103; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:210mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Turn Off Time:150ns; Turn On Time:680ns
600 V Half Bridge Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High side output in phase with HIN input; Low side output out of phase with LIN input