공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-26
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
onsemiFCH067N65S3-F155
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247
InfineonIRFP4137PBF
Power Field-Effect Transistor, 38A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IPW65R080CFD에 대한 설명입니다.
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube
Infineon N-Ch MOSFET CoolMOS CFD Vds=700V 43A TO-247 TH 3-Pin
MOSFETs; IPW65R080CFD; INFINEON TECHNOLOGIES; 650 V; 43.3 A; 20 V; 391 W
MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N-CH, 700V, 43.3A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:391W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
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기술 사양
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)43.3 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance80 mΩ
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance5.03 nF
Max Operating Temperature150 °C
Max Power Dissipation391 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Rds On Max80 mΩ
Rise Time18 ns
Threshold Voltage4 V
Turn-Off Delay Time85 ns
Turn-On Delay Time20 ns