공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Infineon IPW60R299CP에 대한 설명입니다.
Trans MOSFET N-CH 650V 11A 3-Pin TO-247 Tube
11 A 600 V 0.299 ohm N-CHANNEL Si POWER MOSFET TO-247
MOSFET N-Ch 650V 11A TO247-3 CoolMOS CP
CoolMOS 600V 11A 299mOhm TO247
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N, 600V, TO-247; Transistor type:Enhancement; Current, Id cont:11A; Resistance, Rds on:0.299R; Case style:TO-247 (SOT-249); Current, Idm pulse:34A; Power, Pd:96W; Termination Type:SMD; Transistor polarity:N; Voltage, RoHS Compliant: Yes
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- INFINEON/IR
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기술 사양
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance299 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.1 nF
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation96 W
Rds On Max299 mΩ
Rise Time5 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)600 V
Dimensions
Height21.1 mm
Length16.03 mm
Width5.16 mm