가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPW50R299CPFKSA1 | 9,838 | 18h | |||||||||
| Farnell | IPW50R299CP | 0 | 1 | 17h | ||||||||
| Microchip USA | IPW50R299CP | 352 | 300 | Bulk | 12h | |||||||
| Verical | IPW50R299CPFKSA1 | 238 | 189 | |||||||||
| Win Source | WS-IPW50R299CP | 1,580 | 10 | 19h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
관련 부품
STMicroelectronicsSTW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Infineon IPW50R299CPFKSA1에 대한 설명입니다.
Trans MOSFET N-CH 500V 12A 3-Pin TO-247 Tube
Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-247; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:550V; Current, Id Cont:12A; On State Resistance:0.299ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-247; ;RoHS Compliant: Yes
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-247; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageTO-247-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance299 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage550 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.19 nF
Max Operating Temperature175 °C
Max Power Dissipation104 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance299 mΩ
Package Quantity240
Power Dissipation104 W
Rds On Max299 mΩ
Rise Time14 ns
TerminationThrough Hole
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Dimensions
Height21.1 mm
Length16.03 mm
Width5.16 mm