공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-03
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
InfineonSPW47N60C3FKSA1
MOSFET N-CH 650V 47A TO247-3 N-Channel 650 V 47A (Tc) 415W (Tc) Through Hole PG-TO247-3-1
STMicroelectronicsSTW70N60M2
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
InfineonIPW65R041CFDFKSA1
MOSFET N-CH 650V 68.5A TO247-3 N-Channel 650 V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3-1
STMicroelectronicsSTW62NM60N
N-channel 600 V, 0.04 Ohm typ., 65 A MDmesh(TM) II Power MOSFET in a TO-247 package
InfineonIPW65R019C7FKSA1
MOSFET N-CH 650V 75A TO247-3 N-Channel 650 V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3
설명
유통업체에서 제공한 Infineon IPW60R045CPFKSA1에 대한 설명입니다.
MOSFET N-CH 650V 60A TO247-3 N-Channel 650 V 60A (Tc) 431W (Tc) Through Hole PG-TO247-3-1
MOSFET N-CH 650V 60A TO-247 / Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
Infineon N-Channel MOSFET CoolMOS CP Series, Vds=650V, 60A, TO-247, TH, 3-Pin
COOLMOS POWER TRANSISTOR Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:650V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:431W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Package / Case:TO-247; Power Dissipation Pd:431W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vds)600 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation431 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance45 mΩ
Package Quantity240
Power Dissipation431 W
Rise Time20 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time100 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)600 V
Dimensions
Height25.549 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책