유통업체에서 제공한 Infineon IPT015N10N5ATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 100 V, 300 A, 0.0013 ohm, HSOF, Surface Mount
Trans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R
100V 300A 375W 1.5m´Î@10V150A 3.8V@250Ã×A N Channel PG-HSOF-8 MOSFETs ROHS
MOSFETs; IPT015N10N5; INFINEON TECHNOLOGIES; 100 V; 32 A; 20 V; 375 W
OptiMOSTM 5Power-Transistor,100V, PG-HSOF-8, RoHS
Infineon SCT
375KW 20V 3.8V 169nC@ 10V 1N 100V 1.5m¦¸@ 10V 300A 12nF@ 50V HSOF-8,TO-3P-3L , 9.9mm*10.38m*2.3mm
Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 100V, 300A, HSOF;
Ideal for high frequency switching and sync. rec
MOSFETs N-Channel 100V 300A HSOF8
Mosfet, N-Ch, 100V, 300A, 175Deg C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:300A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPT015N10N5ATMA1
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.