가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7769L2TR1PBF | 0 | 1K | Bulk | 10h | |||||||
| Farnell | IRF7769L2TR1PBF | 0 | 1 | Cut Tape | 8h | |||||||
| Component Stockers USA | IRF7769L2TR1PBF | 786 | >1wk | |||||||||
| Worldway Electronics | IRF7769L2TR1PBF | 16,548 | 7 | Tape & Reel | 1d | |||||||
| Aztech | IRF7769L2TR1PBF | 15,985 | 3d |
관련 부품
InfineonAUIRF7769L2TR
Power MOSFET, N Channel, 100 V, 124 A, 3.5 mOhm, DirectFET L8, 15 Pins, Surface Mount
InfineonIRF7759L2TRPBF
Trans MOSFET N-CH Si 75V 160A 15-Pin Direct-FET L8 T/R / MOSFET N-CH 75V DIRECTFET L8
InfineonAUIRF7759L2TR
Power Field-Effect Transistor, 375A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRF7759L2TR1PBF
MOSFET Operating temperature: -55...175 °C Housing type: DirectFET Polarity: N Power dissipation: 3.3 W
설명
유통업체에서 제공한 Infineon IRF7769L2TR1PBF에 대한 설명입니다.
Trans MOSFET N-CH 100V 20A 15-Pin Direct-FET L8 T/R
N CH MOSFET, 100V, 20A DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.7V ;RoHS Compliant: Yes
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 20 amperes optimized for high frequency switching and synchronous rectification applications. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa
MOSFET, N CH, 100V, 124A, DIRECTFET L8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Current Id Max:124A; Power Dissipation Pd:125W; Voltage Vgs Max:20V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Terminals9
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.56 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.3 W
Rds On Max3.5 mΩ
Resistance3.5 MΩ
Rise Time32 ns
Threshold Voltage2.7 V
Turn-Off Delay Time92 ns
Turn-On Delay Time44 ns
Dimensions
Height508 µm
Length9.144 mm
Width7.1 mm