공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-09-30
LTD Date2017-03-31
관련 부품
InfineonIRFB7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
InfineonIPA041N04NGXKSA1
MOSFET N-CH 40V 70A TO220-FP / N-Channel 40 V 70A (Tc) 35W (Tc) Through Hole PG-TO220-FP
NXP SemiconductorsBUK753R5-60E,127
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiFDPF041N06BL1
MOSFET N-CH 60V 77A TO-220F / Trans MOSFET N-CH Si 60V 77A 3-Pin(3+Tab) TO-220F Tube
InfineonIPP80N06S2LH5AKSA2
55V, N-Ch, 5 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS
설명
유통업체에서 제공한 Infineon IPP100N06S205AKSA1에 대한 설명입니다.
Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-220AB Tube
MOSFET N-CH 55V 100A TO220-3
MOSFET 55V 5.0mOHM AECQ TO220
Power Field-Effect Transistor, 100A I(D), 55V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
OptiMOS Power-Transistor
IPP100N06 - 55V-60V N-CHANNEL AUTOMOTIVE;
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- Infineon Technologies
- INF
- INFINEO
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- INFIN
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- INFI
- INFENION
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.11 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max5 mΩ
Rise Time31 ns
Turn-On Delay Time21 ns