대체 부품
Price @ 1000
$ 1.64
$ 2.034
Stock
391
163,575
Authorized Distributors
1
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220
Drain to Source Voltage (Vdss)
80 V
80 V
Continuous Drain Current (ID)
100 A
100 A
Threshold Voltage
-
-
Rds On Max
-
2.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
-
10.7 nF
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설명
유통업체에서 제공한 Infineon IPP028N08N3GHKSA1에 대한 설명입니다.
Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220
Power Field-Effect Transistor, 100A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP028N08 POWER FIELD-EFFECT TRANSISTOR;
N-CHANNEL POWER MOSFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance2.8 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation300 W
Rise Time73 ns
Turn-Off Delay Time86 ns
Turn-On Delay Time28 ns
Dimensions
Height20.7 mm