Infineon IPP023NE7N3GXKSA1

Transistor MOSFET N-Channel 75V 120A 3-Pin TO-220

MOSFET 75V 120A 2.3mOHM TO220 RoHSconf

Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH, 75V, 120A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

The 75V OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 120 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 2.3 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 26 / Turn-OFF Delay Time ns = 70 / Turn-ON Delay Time ns = 19 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300