공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-24
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
LTB Date2016-12-01
LTD Date2017-06-01
관련 부품
InfineonIPP100N08S207AKSA1
MOSFET N-CH 75V 100A TO220-3 / N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
InfineonIPI084N06L3GXKSA1
MOSFET N-CH 60V 50A TO262-3 / N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
InfineonIPI029N06NAKSA1
N-Channel 60 V 100 A 3 W Through Hole OptiMOSTM Power Transistor - PG-TO262-3
InfineonIPI040N06N3GXKSA1
OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS
InfineonIPI90N06S4L04AKSA2
MOSFET N-CH 60V 90A TO262-3 / N-Channel 60 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
설명
유통업체에서 제공한 Infineon IPI80N06S407AKSA2에 대한 설명입니다.
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance7.1 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.5 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance7.1 mΩ
Package Quantity500
Power Dissipation79 W
Rds On Max7.4 mΩ
Rise Time3 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time15 ns