공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-13
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2020-03-15
LTD Date2020-09-15
관련 부품
InfineonIPI80N04S403AKSA1
40V, N-Ch, 3.7 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
InfineonIPI040N06N3GXKSA1
OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS
InfineonIPI80N04S4L04AKSA1
MOSFET N-CH 40V 80A TO262-3 / N-Channel 40 V 80A (Tc) 71W (Tc) Through Hole PG-TO262-3
STMicroelectronicsSTB80NF55-06-1
N-channel 55 V, 5 mOhm, 80 A I2PAK STripFET(TM) II Power MOSFET
STMicroelectronicsSTB80NF55L-08-1
N-Channel 55V - 0.0065Ohm - 80A - I2PAK StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 Infineon IPI80N06S2L05AKSA2에 대한 설명입니다.
MOSFET N-CH 55V 80A TO262-3 / N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
55V, N-Ch, 4.8 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™, PG-TO262-3-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 80A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time90 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.7 nF
Max Dual Supply Voltage55 V
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.8 mΩ
Package Quantity500
Power Dissipation300 W
Rds On Max4.8 mΩ
Rise Time93 ns
Turn-Off Delay Time67 ns
Turn-On Delay Time19 ns