공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-15
LTD Date2015-07-15
관련 부품
STMicroelectronicsSTI260N6F6
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
InfineonIPP100N08S207AKSA1
MOSFET N-CH 75V 100A TO220-3 / N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
InfineonIPI032N06N3GAKSA1
MOSFET N-CH 60V 120A TO262-3 / N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
설명
유통업체에서 제공한 Infineon IPI023NE7N3 G에 대한 설명입니다.
Trans MOSFET N-CH 75V 120A 3-Pin TO-262 Tube
Compliant 22 ns 26 ns 2.3 mΩ TO-262-3 Halogen Free 3 14.4 nF
Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
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- Infineon Technologies
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- INFINEO
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- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.3 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max2.3 mΩ
Rise Time26 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time19 ns