가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IPD90N04S304ATMA1 | 2,500 | 2500 | |||||||||
| Rochester Electronics | IPD90N04S304ATMA1 | 15,012 | 22h | |||||||||
| Future Electronics | IPD90N04S304ATMA1 | 0 | 2500 | Tape & Reel | ||||||||
| Avnet | IPD90N04S304ATMA1 | 0 | 2500 | 2d | ||||||||
| Mouser | 726-IPD90N04S3-04 | 1,500 | 1 | Tape & Reel |
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-09
Lifecycle StatusNRND (Last Updated: 2 weeks ago)
관련 부품
InfineonAUIRFR8403
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonAUIRFR8403TRL
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
STMicroelectronicsSTD130N4F6AG
Automotive-grade N-channel 40 V, 3.0 mOhm typ., 80 A STripFET F6 Power MOSFET in a DPAK package
설명
유통업체에서 제공한 Infineon IPD90N04S304ATMA1에 대한 설명입니다.
40V, N-Ch, 3.6 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) TO-252
Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Dual Supply Voltage40 V
Max Operating Temperature175 °C
Max Power Dissipation136 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity2500
PackagingTape & Reel
Power Dissipation136 W
Rds On Max3.6 mΩ
Rise Time13 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time20 ns
Dimensions
Height2.3 mm
Length6.5 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
규정 준수 정책