공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-11
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
InfineonAUIRFR8403
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
설명
유통업체에서 제공한 Infineon IPD036N04LG에 대한 설명입니다.
Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R
40V 90A 94W 3.6m惟@10V,90A 2V@45uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS
94W 20V 59nC 1N 40V 3.6m¦¸@ 10V 4.7nF@ 20V TO-252-2 , 6.5mm*6.22mm*2.3mm
Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 90A, 40V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
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기술 사양
Physical
Case/PackageTO-252-3
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.3 nF
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation94 W
Rds On Max3.6 mΩ
Rise Time5.4 ns
Threshold Voltage1.2 V
Turn-Off Delay Time37 ns
Turn-On Delay Time9.3 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm