Infineon IPD65R660CFDATMA1

Name: Infineon IPD65R660CFDATMA1
Brand: Infineon
SKU: IPD65R660CFDATMA1

Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R

$ 0.813

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPD65R660CFDATMA1	14,296					0.979	0.813	0.724	1d
Farnell	2	IPD65R660CFDATMA1	0	1	Cut Tape	1.730*	1.498*	1.250*	1.034*	0.947*	1d
Verical	2	IPD65R660CFDATMA1	13,469	307					1.016	0.906
Worldway Electronics		IPD65R660CFDATMA1	9,918	7	Tape & Reel		0.230	0.223	0.211	0.211	1d
Aztech		IPD65R660CFDATMA1	10,985			2.560	2.560	2.560	2.560	2.560	21h

재고 내역

3개월 추세: +0.00%

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IPD65R660CFDATMA1에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet21 페이지0년 전

element14 APAC

TME

재고 내역

3개월간의 트렌드:

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InfineonIPD65R660CFDATMA1

InfineonIPD65R660CFDBTMA1

Price @ 1000

$ 0.813

$ 0.614

Stock

93,718

240,966

Authorized Distributors

2

Mount

-

Surface Mount

Case/Package

-

TO-252-3

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

6 A

Threshold Voltage

-

Rds On Max

-

660 mΩ

Gate to Source Voltage (Vgs)

-

20 V

Power Dissipation

63 W

Input Capacitance

-

615 pF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

설명

유통업체에서 제공한 Infineon IPD65R660CFDATMA1에 대한 설명입니다.

Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 650V, 6A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.594ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 62.5W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CFD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon