가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPD65R420CFDBTMA1 | 2,526 | 4h | |||||||||
| Microchip USA | IPD65R420CFDBTMA1 | 255 | 3K | Tray | 20h | |||||||
| Verical | IPD65R420CFDBTMA1 | 2,500 | 312 | |||||||||
| Win Source | WS-IPD65R420CFD | 9,000 | 18 | 4h | ||||||||
| Worldway Electronics | IPD65R420CFDBTMA1 | 19,671 | 7 | Tape & Reel | 2h |
공급망
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-07
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2018-08-31
LTD Date2019-02-28
관련 부품
InfineonIPD65R380E6ATMA1
Power MOSFET, N Channel, 650 V, 10.6 A, 0.34 ohm, TO-252 (DPAK), Surface Mount
InfineonIPD65R380C6ATMA1
Power Mosfet, N Channel, 10.6 A, 650 V, 0.34 Ohm, 10 V, 3 V Rohs Compliant: Yes
STMicroelectronicsSTD16N65M2
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
STMicroelectronicsSTD11NM65N
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
STMicroelectronicsSTD15N60M2-EP
N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
설명
유통업체에서 제공한 Infineon IPD65R420CFDBTMA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO252-3, RoHS
Infineon SCT
650V 8.7A 378m惟@10V,3.4A 83.3W 4V@344.5uA 1 N-Channel TO-252 MOSFETs ROHS
650V CoolMOS C6 CFD Power Transistor
Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD65R420 650V AND 700V COOLMOS N-CHANN;
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Resistance420 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation83.3 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance420 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83.3 W
Rds On Max420 mΩ
Rise Time7 ns
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns