가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rutronik | TMOS1346 | 135,000 | 2500 | 7h | ||||||||
| DigiKey | IPD60R380P6ATMA1CT-ND | 5,297 | 1 | Cut Tape | ||||||||
| Avnet | IPD60R380P6ATMA1 | 0 | 2500 | 2d | ||||||||
| Future Electronics | IPD60R380P6ATMA1 | 0 | 2500 | Tape & Reel | ||||||||
| Arrow Electronics | IPD60R380P6ATMA1 | 0 | 2500 |
공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-08-30
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIPD65R380E6ATMA1
Power MOSFET, N Channel, 650 V, 10.6 A, 0.34 ohm, TO-252 (DPAK), Surface Mount
InfineonIPD60R385CPATMA1
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor
STMicroelectronicsSTD15N60M2-EP
N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
STMicroelectronicsSTD16N65M2
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
STMicroelectronicsSTD11NM65N
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
설명
유통업체에서 제공한 Infineon IPD60R380P6ATMA1에 대한 설명입니다.
MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
Power MOSFET, N Channel, 600 V, 10.6 A, 380 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.342ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)10.6 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance877 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance380 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83 W
Rds On Max380 mΩ
Rise Time6 ns
Schedule B8541290080
Turn-Off Delay Time33 ns
Turn-On Delay Time12 ns