가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IPD60R600P6ATMA1 | 5,000 | 2500 | |||||||||
| Rochester Electronics | IPD60R600P6ATMA1 | 5,037 | 2d | |||||||||
| DigiKey | IPD60R600P6ATMA1CT-ND | 4,486 | 1 | Cut Tape | ||||||||
| Newark | IPD60R600P6ATMA1 | 0 | 5 | Cut Tape | ||||||||
| Future Electronics | IPD60R600P6ATMA1 | 0 | 2500 | Tape & Reel |
공급망
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-06-07
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2015-09-15
LTD Date2015-12-15
관련 부품
onsemiNDD60N550U1T4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
STMicroelectronicsSTD11N50M2
N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package
onsemiNDD60N745U1T4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 6.6A Tc 6.6A 84W Tc 600V
설명
유통업체에서 제공한 Infineon IPD60R600P6ATMA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 7.3A TO252
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
MOSFET, N-CH, 600V, 7.3A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)7.3 A
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance557 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation63 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance600 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation63 W
Rds On Max600 mΩ
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time33 ns
Turn-On Delay Time11 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeNot Halogen Free
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
규정 준수 정책