대체 부품
Price @ 1000
$ 0.633
$ 0.633
Stock
54,575
47,817
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
-
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
10.6 A
10.6 A
Threshold Voltage
-
-
Rds On Max
380 mΩ
380 mΩ
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
-
83 W
Input Capacitance
700 pF
700 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-08-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-09-15
LTD Date2015-12-15
관련 부품
STMicroelectronicsSTD15N60M2-EP
N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
STMicroelectronicsSTD16N50M2
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
onsemiFQD6N50CTF
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
InfineonIPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
onsemiNDD60N550U1T4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
설명
유통업체에서 제공한 Infineon IPD60R380E6BTMA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK
Power Field-Effect Transistor, 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET N-CH 600V 10.6A TO252-3
IPD60R380 - 600V COOLMOS N-CHANNEL POWER;
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10.6 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max380 mΩ
Rise Time9 ns
Turn-Off Delay Time56 ns
Turn-On Delay Time11 ns
Dimensions
Height2.56 mm