공급망
Country of OriginAustria, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-08-05
Lifecycle StatusProduction (Last Updated: 1 week ago)
관련 부품
InfineonIRFR3707PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.7 Milliohms;ID 61A;D-Pak (TO-252AA);PD 87W
InfineonIRLR3103TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W
InfineonIRFR3708TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8.5Milliohms;ID 61A;D-Pak (TO-252AA);PD 87W
설명
유통업체에서 제공한 Infineon IPD50N03S4L06ATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 30 V, 50 A, 0.0049 ohm, TO-252 (DPAK), Surface Mount
30V, N-Ch, 5.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 50A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, Aec-Q101, N-Ch, 30V, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Rohs Compliant: Yes |Infineon Technologies IPD50N03S4L06ATMA1
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time7 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.33 nF
Max Dual Supply Voltage30 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.5 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation56 W
Rds On Max5.5 mΩ
Rise Time1 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time3 ns
Dimensions
Height2.5 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
규정 준수 정책