가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPB144N12N3GATMA1 | 25,071 | 13m | |||||||||
| DigiKey | IPB144N12N3GATMA1CT-ND | 150 | 1 | Cut Tape | ||||||||
| Farnell | IPB144N12N3GATMA1 | 240 | 1 | Cut Tape | 1d | |||||||
| Mouser | 726-IPB144N12N3GATMA | 3,452 | 1 | Tape & Reel | ||||||||
| Microchip USA | IPB144N12N3GATMA1 | 1,942 | 600 | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-07-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
설명
유통업체에서 제공한 Infineon IPB144N12N3GATMA1에 대한 설명입니다.
Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 56A I(D), 120V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 120V, 41A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 41A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.0123ohm; Rds(on) Test Voltag; Available until stocks are exhausted
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.
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- Infineon Technologies
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- INFINEON TECHNOLOGIE
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)56 A
Drain to Source Resistance14.4 mΩ
Drain to Source Voltage (Vdss)120 V
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.42 nF
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance14.4 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation107 W
Rise Time9 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time16 ns