Infineon IPB011N04LGATMA1

Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

Infineon MOSFET IPB011N04LGATMA1

180 A 40 V 0.0014 ohm N-CHANNEL Si POWER MOSFET

Infineon NMOSFET + OptiMOS 5, Vds=40 V, 180 A, TO-263-7, , 7

Power Field-Effect Transistor, 180A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

N-CH 40V 180A 2mOhm TO263-7 RoHSconf

IPB011N04LG INFINEON TO-263-7-3

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

MOSFET, N CH, 180A, 40V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):800µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V