Infineon IPA65R400CEXKSA1

MOSFET N-CH 650V TO220 / N-Channel 650 V 15.1A (Tc) 31W (Tc) Through Hole PG-TO220-FP

Trans MOSFET N-CH 650V 15.1A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS

Power MOSFET, N Channel, 650 V, 15.1 A, 0.36 ohm, TO-220FP, Through Hole

Power Field-Effect Transistor, 15.1A I(D), 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Mosfet, N-Ch, 650V, 15.1A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:15.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.36Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPA65R400CEXKSA1

Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV