공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-03-31
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-08-15
LTD Date2023-02-15
관련 부품
STMicroelectronicsSTF16N60M2
N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220FP package
InfineonIPA60R330P6XKSA1
N-Channel 600 V 7 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220FP
설명
유통업체에서 제공한 Infineon IPAW60R380CEXKSA1에 대한 설명입니다.
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 650V 15A 3-Pin TO-220FP Tube
Mosfet, N-Ch, 600V, 15A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R380CEXKSA1
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage600 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance380 mΩ
Package Quantity450
Power Dissipation31 W
Rds On Max380 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time56 ns
Turn-On Delay Time11 ns
Dimensions
Height18.57 mm