공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-09-30
LTD Date2017-03-31
관련 부품
InfineonIPP50N10S3L16AKSA1
100V, N-Ch, 15.7 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T, PG-TO220-3, RoHS
NXP SemiconductorsPSMN8R5-100XSQ
Power Field-Effect Transistor, 49A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IPP47N10S33AKSA1에 대한 설명입니다.
Trans MOSFET N-CH 100V 47A 3-Pin TO-220AB Tube
SIPMOS Power-Transistor Feature N-Channel Enhancement mode
Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Summary of Features: N-Channel; Enhancement mode; Logic Level; 175C operating temperature; Avalanche rated; dv/dt rated; Green Package (lead free) | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
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기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)47 A
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.5 nF
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Max Power Dissipation175 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max33 mΩ
Rise Time23 ns
Turn-Off Delay Time63 ns
Turn-On Delay Time25 ns