유통업체에서 제공한 Infineon IKD06N60RFATMA1에 대한 설명입니다.
100W 12A 600V FS(Field Stop) TO-252-3 IGBT Transistors / Modules ROHS
Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252
Infineon IKD06N60RFATMA1 Single IGBT, 6.5 A 600 V, 3-Pin PG-TO252
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz, PG-TO252-3, RoHS
Infineon SCT
IGBT, 12 A, 2.2 V, 100 W, 600 V, TO-252 (DPAK), 3 Pins
IGBT Transistors IGBT PRODUCTS
Igbt, Single, 600V, 12A, To-252; Dc Collector Current:12A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes
IKD06N60 - DISCRETE IGBT WITH AN
IGBT TRENCH/FS 600V 12A TO252-3
100W 2.2V 600V 12A DPAK , 2.56mm
Hard-switching 600 V, 6 A RC-Drives TRENCHSTOPTM IGBT3 discrete in a TO-252 package with monolithically integrated reverse conducting diode, has been developed as a cost optimized solution for consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives.