Infineon IKA10N60TXKSA1

Trans IGBT Chip N-CH 600V 11.7A 30000mW 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS

Infineon IKA10N60TXKSA1 IGBT, 11.7 A 600 V, 3-Pin PG-TO220-3, Through Hole

Insulated Gate Bipolar Transistor, 11.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IGBT, 600V, 11.7A, TO-220FP-3; DC Collector Current:11.7A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:30W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins

IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:10A; Voltage, Vce Sat Max:2.05V; Power Dissipation:30W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1

Hard-switching 600 V, 10 A TRENCHSTOP™ IGBT3 copacked with full-rated external free-wheeling diode in a TO220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.