IGBT+ DIODE,1200V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; Operating Temperature Range:-40°C to +150°C; Power Dissipation Max:270W