대체 부품
Price @ 1000
$ 20.299
$ 20.974
Stock
119,454
89,067
Authorized Distributors
6
6
Case/Package
Module
-
Number of Pins
18
-
Max Output Current
-
-
Min Input Voltage
-
-
Max Input Voltage
-
-
Min Output Voltage
-
-
Max Output Voltage
-
-
Number of Outputs
-
-
공급망
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-06-18
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
InfineonFP15R12W1T4B3BOMA1
Infineon FP15R12W1T4B3BOMA1 Common Collector IGBT Module, 28 A 1200 V, 23-Pin EASY1B, PCB Mount
InfineonFS50R12W2T4BOMA1
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
MicrochipAPTGT35A120T1G
Pm-Igbt-Tfs-Sp1 Rohs Compliant: Yes |Microchip Technology APTGT35A120T1G
MicrochipAPTGT35H120T3G
Pm-Igbt-Tfs-Sp3F Rohs Compliant: Yes |Microchip Technology APTGT35H120T3G
MicrochipAPTGFQ25H120T2G
FULL-BRIDGE NPT IGBT POWER MODULE Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES
설명
유통업체에서 제공한 Infineon FS25R12W1T4BOMA1에 대한 설명입니다.
Trans IGBT Module N=-CH 1200V 45A 205000mW 18-Pin EASY1B Tray
IGBT, LOW POW, 1200V, 25A, EASYPACK; Transistor Polarity: N Channel; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 205W; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
Igbt Module; Transistor, Polaridad:Canal N; Corriente De Colector Dc:25A; Tensión De Saturación Colector-Emisor Vce(On):1.2Kv; Disipación De Potencia Pd:205W; Tensión Colector Emisor V(Br)Ceo:1.2Kv; Núm. De Contactos:18 |Infineon FS25R12W1T4
EasyPACK™1B 1200 V, 25 A sixpack IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC. Also available as variation with PressFIT mounting technology: FS25R12W1T4_B11. Also available as variation with PressFIT mounting technology: FS25R12W1T4_B11 or with TRENCHSTOP™ IGBT7: FS25R12W1T7.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageModule
Contact PlatingTin
MountScrew
Number of Pins18
Number of Terminals18
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.25 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current45 A
Max Collector Current45 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation205 W
Min Operating Temperature-40 °C
Number of Elements6
Package Quantity24
Power Dissipation205 W
Schedule B8541290080
Turn-Off Delay Time180 ns
Turn-On Delay Time50 ns
Dimensions
Height12.35 mm
Length62.8 mm
Width33.8 mm