IGBT, LOW POW NTC, 1200V, 25A, PIM; Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:190W