Infineon FF800R17KP4B2NOSA2

Trans IGBT Module N-CH 1700V 1.2KA 4850000mW Automotive 10-Pin IHM130-1 Tray
$ 880.103
EOL

가격 및 재고

데이터시트 및 문서

Infineon FF800R17KP4B2NOSA2에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Infineon

Datasheet1 페이지11년 전

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Farnell

재고 내역

3개월간의 트렌드:
-5.56%

대체 부품

Price @ 1000
$ 880.103
$ 880.103
Stock
89,005
89,005
Authorized Distributors
4
4
Mount
Screw
Screw
Case/Package
Module
Module
Collector Emitter Breakdown Voltage
1.7 kV
1.7 kV
Max Collector Current
1.2 kA
1.2 kA
Power Dissipation
1.2 MW
1.2 MW
Collector Emitter Saturation Voltage
2.2 V
2.2 V
Reverse Recovery Time
-
-

공급망

Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-10
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2027-04-15
LTD Date2027-12-15

관련 부품

Trans IGBT Module N-CH 1200V 1.2KA 3900W 10-Pin IHM130-2 Tray
Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, MODULE-29
Insulated Gate Bipolar Transistor, 605A I(C), 1700V V(BR)CES, N-Channel, ECONOPACK-29
Trans IGBT Module N-CH 1700V 75A 312000mW 12-Pin Case SP-1 Tube
Pm-Igbt-Tfs-Sp1 Rohs Compliant: Yes |Microchip Technology APTGT50A170T1G
Pm-Igbt-Tfs-Sp6C Rohs Compliant: Yes |Microchip Technology APTGT300DA170G

설명

유통업체에서 제공한 Infineon FF800R17KP4B2NOSA2에 대한 설명입니다.

Trans IGBT Module N-CH 1700V 1.2KA 4850000mW Automotive 10-Pin IHM130-1 Tray
Transistor IGBT Module N-CH 1700V 1200A 20V Screw Mount Tray
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel
IGBT MOD 1700V 1200A A-IHV130-3
1700V IHM 130mm Dual IGBT Module with IGBT4, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications | Summary of Features: Low V(cesat); Enlarged Diode for regenerative operation; 4 kV AC 1min Insulation; AlSiC Base Plate for increased Thermal Cycling Capability; UL recognised; High Power and Thermal Cycling Capability | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
IGBT, DUAL MOD, 1700V, 800A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:4.85kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:4.85kW

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부품 번호 별칭

이 부품은 다음과 같은 대체 부품 번호로 알려져 있을 수 있습니다.

  • FF800R17KP4-B2
  • FF800R17KP4B2
  • FF800R17KP4_B2
  • SP000941492