가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | BSZ110N08NS5ATMA1 | 5,000 | 5K | |||||||||
| Newark | BSZ110N08NS5ATMA1 | 0 | 5 | Cut Tape | ||||||||
| Avnet | BSZ110N08NS5ATMA1 | 0 | 5K | 2d | ||||||||
| Future Electronics | BSZ110N08NS5ATMA1 | 0 | 5K | Tape & Reel | ||||||||
| Component Stockers USA | BSZ110N08NS5ATMA1 | 23,234 | >1wk |
공급망
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-05-05
Lifecycle StatusProduction (Last Updated: 1 month ago)
설명
유통업체에서 제공한 Infineon BSZ110N08NS5ATMA1에 대한 설명입니다.
BSZ110N08NS5 Series 80 V 40 A OptiMOSTM5 Power-Transistor - PG-TSDSON-8 FL
Power MOSFET, N Channel, 80 V, 40 A, 0.0096 ohm, TSDSON, Surface Mount
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
Mosfet, N-Ch, 80V, 40A, 150Deg C, 50W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies BSZ110N08NS5ATMA1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1 nF
Max Dual Supply Voltage80 V
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance11 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation50 W
Rds On Max11 mΩ
Rise Time3 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time9 ns
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책