대체 부품
Price @ 1000
$ 0.195
Stock
163,337
722,845
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-223-4
SOT-223
Drain to Source Voltage (Vdss)
-250 V
-250 V
Continuous Drain Current (ID)
260 mA
260 mA
Threshold Voltage
-
-1.5 V
Rds On Max
12 Ω
12 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.8 W
1.8 W
Input Capacitance
104 pF
83 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-05-15
LTD Date2013-11-15
관련 부품
InfineonBSP149 L6906
MOSFET, N-CH, 200V, 660MA, SOT-223; Transistor Polarity:N Channel; Continuous Dr
설명
유통업체에서 제공한 Infineon BSP92P L6327에 대한 설명입니다.
MOSFET, P-CH, 250V, 260MA, SOT-223; Transistor Polarity:P Channel; Continuous Dr
Trans MOSFET P-CH 250V 0.26A 4-Pin(3+Tab) SOT-223 T/R
Power Field-Effect Transistor, 0.26A I(D), 250V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4
MOSFET, P-CH, 250V, 260MA, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-260mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:1.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
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- Infineon Technologies
- INF
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기술 사양
Physical
Case/PackageSOT-223-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)260 mA
Current Rating-260 mA
Drain to Source Breakdown Voltage-250 V
Drain to Source Resistance12 Ω
Drain to Source Voltage (Vdss)-250 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance104 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs-1.5 V
Number of Channels1
Number of Elements1
Power Dissipation1.8 W
Rds On Max12 Ω
Rise Time6 ns
Turn-Off Delay Time67 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)-250 V
Dimensions
Height1.8 mm