데이터시트 및 문서
Infineon BSP372L6327HTSA1에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트4년 전
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-31
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2013-09-15
LTD Date2014-03-15
관련 부품
NXP SemiconductorsPMT200EN,115
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsPMT200EN,135
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Diodes Inc.DMP10H400SEQ-13
Mosfet, P-Ch, 100V, 6A, Sot-223 Rohs Compliant: Yes |Diodes Inc. DMP10H400SEQ-13
Diodes Inc.DMP10H400SE-13
DMP10H400SE Series 100 V 2.3 A P Channel Enhancement Mode Mosfet-SOT-223
설명
유통업체에서 제공한 Infineon BSP372L6327HTSA1에 대한 설명입니다.
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R
1.7 A 100 V 0.31 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL POWER MOSFET
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1.7 A
Drain to Source Resistance310 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time50 ns
Gate to Source Voltage (Vgs)14 V
Input Capacitance520 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.8 W
Rds On Max310 mΩ
Rise Time35 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time20 ns