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NXP SemiconductorsPMT200EN,115
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon BSP297L6327HTSA1에 대한 설명입니다.
MOSFET N-CH 200V 660MA SOT-223
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SMALL-SIGNAL N-CHANNEL MOSFET
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기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)660 mA
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vdss)200 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance357 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation1.8 W
Rds On Max1.8 Ω
Rise Time3.8 ns
Turn-Off Delay Time49 ns
Turn-On Delay Time5.2 ns
Dimensions
Height1.8 mm