관련 부품
VishayIRFL210PBF.
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2 W
InfineonBSP297H6327XTSA1
MOSFET N-CH 200V 660MA SOT223-4 N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
설명
유통업체에서 제공한 Vishay IRFL214TRPBF에 대한 설명입니다.
MOSFET, N-CH, 250V, 0.79A, SOT-223; Available until stocks are exhausted Alternative available
N-Channel 250 V 2 Ohm Power Mosfet Surface Mount - SOT-223-3
Trans MOSFET N-CH 250V 0.79A 4-Pin(3+Tab) SOT-223 T/R
N CH MOSFET, 250V, 790mA, SOT-223, FULL REEL
Small Signal Field-Effect Transistor, 0.79A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
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- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
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- Vishay Angstrohm
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기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight250.212891 mg
Technical
Continuous Drain Current (ID)790 mA
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vds)250 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance140 pF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation2 W
Rds On Max2 Ω
Resistance2 Ω
Rise Time7.6 ns
Schedule B8541290080
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm