공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-18
Lifecycle StatusObsolete (Last Updated: 8 months ago)
관련 부품
NXP SemiconductorsPMT200EN,115
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Diodes Inc.ZXMP6A17GQTA
MOSFET P-Ch 2W(Ta) 20V 1V@250µA 17.7nC@10V 60V 125mΩ@2.2A,10V 3A 637pF@30V SOT-223-3 SMD
설명
유통업체에서 제공한 Infineon BSP129L6327HTSA1에 대한 설명입니다.
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R
Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.8W(Ta) 20V 1V@ 108µA 5.7nC@ 5 V 1individualNChannel 240V 6Ω@ 350mA,10V 108pF@25V SOT SMD mount
BSP129 0.35A, 240V, NCHANEL POWER MOSFET;
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)350 mA
Drain to Source Breakdown Voltage240 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)240 V
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance108 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage240 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation1.8 W
Rds On Max6 Ω
Rise Time4.1 ns
Turn-Off Delay Time22 ns
Turn-On Delay Time4.4 ns
Dimensions
Height1.8 mm