공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-05-15
LTD Date2013-11-15
관련 부품
InfineonBSP171PL6327HTSA1
MOSFET P-CH 60V 1.9A SOT-223 / Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
NXP SemiconductorsPMT200EN,115
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon BSP92PL6327HTSA1에 대한 설명입니다.
Trans MOSFET P-CH 250V 0.26A 4-Pin(3+Tab) SOT-223 T/R
MOSFET P-CH 250V 260MA SOT223-4
Power Field-Effect Transistor, 0.26A I(D), 250V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP92 POWER FIELD-EFFECT TRANSISTOR, 0.;
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)260 mA
Drain to Source Breakdown Voltage-250 V
Drain to Source Resistance12 Ω
Drain to Source Voltage (Vdss)-250 V
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance104 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation1.8 W
Rds On Max12 Ω
Rise Time6 ns
Turn-Off Delay Time67 ns
Turn-On Delay Time5 ns
Dimensions
Height1.8 mm
규정 준수
환경 분류
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책