대체 부품
Price @ 1000
$ 63.21
Stock
12,996
39,237
Authorized Distributors
0
2
Mount
Screw
-
Case/Package
Module
-
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
20 A
70 A
Power Dissipation
-
80 W
Collector Emitter Saturation Voltage
2.35 V
1.95 V
Reverse Recovery Time
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-06-30
LTD Date2021-06-30
설명
유통업체에서 제공한 Infineon BSM10GP60에 대한 설명입니다.
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel
INFINEON IGBT Module
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageModule
MountScrew
Number of Terminals24
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.35 V
Collector Emitter Voltage (VCEO)600 V
Max Collector Current20 A
Max Operating Temperature125 °C
Max Power Dissipation80 W
Min Operating Temperature-40 °C
Number of Elements7
Dimensions
Height17 mm
Length107.5 mm
Width45 mm